Fairchild FDB86102LZ

N 通道100 V8.3A（Ta），30A（Tc）3V @ 250µA3.1W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

Features

Max rDs(on)= 24 mΩ at VGs= 10V,ID= 8.3A

Max rDs(on)= 35 mΩ atVGs=4.5V,lD=6.8A

HBM ESD protection level > 6 kV typical (Note 4)

Very low Qg and Qgd compared to competing trench technologies

Fast switching speed

100% UIL Tested

RoHS Compliant

Applications

DC-DC conversion

Inverter

Synchronous Rectifier

Automotive 

Infotainment & cluster 

Communications equipment 

Broadband fixed line access Industrial Industrial transport (non-car & non-light truck)