ADI HMC902LP3ETR

5GHz ~ 10GHz16dBm19.5dB1.8dB3.5V

Overview

The HMC902LP3ETR is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. The HMC902LP3ETR is housed in a leadless 3 mm × 3 mm plastic surface mount package. The amplifier operates between 5 GHz and 11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure, and 28 dBm of output IP3, while requiring only 80 mA from a 3.5 V supply.

The P1dB output power of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image reject mixers. The HMC902LP3ETR also features inputs/outputs that are dc blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios and C band, very small aperture terminal (VSAT) applications.

Features

Tape & Reel (TR) Package
WIDE BAND LOW POWER RF/Microwave Amplifier
RF Type General Purpose
16 pins

Surface Mount Mounting Type

Applications

There are a lot of Analog Devices Inc.
HMC902LP3ETR RF Amplifiers applications.

• Notebook PC
• Ultra-Mobile PC
• Recreational
• Marine Navigation
• Avionics
• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications