ADI HMC407MS8GETR

5GHz ~ 7GHz25dBm15dB5.5dB5V

Overview

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.

Features

Tape & Reel (TR) Package
WIDE BAND MEDIUM POWER RF/Microwave Amplifier
RF Type General Purpose
8 pins

Surface Mount Mounting Type

Applications

There are a lot of Analog Devices Inc.
HMC407MS8GETR RF Amplifiers applications.

• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications
• ISM applications
• Wireless infrastructure
• Automated test equipment
• RF/IF gain control
• Microwave Radios