Renesas UPD5740T6N-E2-A

470MHz ~ 770MHz-5.5dBm15dB1.5dB2.3V ~ 3.3V

Overview

UPD5738T6N-E2-A with pin details, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a 6-XFDFN Exposed Pad Package Case, Impedance is shown on datasheet note for use in a 50 Ohm, it has an Operating Temperature range of -45°C ~ 85°C, Voltage Supply is designed to work in 1.5 V ~ 3.6 V, as well as the 6-TSON Supplier Device Package, the device can also be used as DPDT Circuit. In addition, the Topology is Reflective, the device is offered in 20dBm (typ) IP1dB P1dB, the device has a General Purpose of RF Type, and Frequency Lower is 10MHz, and the Frequency Upper is 2.5GHz, and Isolation Frequency is 15dB @ 2.5GHz (typ), and the Insertion Loss Frequency is 1.6dB @ 2.5GHz.

UPD5740T6N-E2 with circuit diagram manufactured by RENESAS. The UPD5740T6N-E2 is available in QFN Package, is part of the IC Chips.

Features

Bulk Package
RF Type General Purpose
2.3V~3.3V voltage
5mA current

Surface Mount Mounting Type

Applications

There are a lot of Rochester Electronics, LLC
UPD5740T6N-E2-A RF Amplifiers applications.

• Ultra-Mobile PC
• Recreational
• Marine Navigation
• Avionics
• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications
• ISM applications