Renesas UPD5738T6N-E2-A

通用反射

Overview

UPD5738T6N-A with pin details, that includes Bulk Alternate Packaging Packaging, they are designed to operate with a 6-XFDFN Exposed Pad Package Case, Impedance is shown on datasheet note for use in a 50 Ohm, it has an Operating Temperature range of -45°C ~ 85°C, Voltage Supply is designed to work in 1.5 V ~ 3.6 V, as well as the 6-TSON Supplier Device Package, the device can also be used as DPDT Circuit. In addition, the Topology is Reflective, the device is offered in 20dBm (typ) IP1dB P1dB, the device has a General Purpose of RF Type, and Frequency Lower is 10MHz, and the Frequency Upper is 2.5GHz, and Isolation Frequency is 15dB @ 2.5GHz (typ), and the Insertion Loss Frequency is 1.6dB @ 2.5GHz.

UPD5729T6J-E4 with circuit diagram manufactured by NEC. The UPD5729T6J-E4 is available in SOT-563SMD6 Package, is part of the IC Chips.

Features

Bulk Package
General Purpose RF Type
Reflective Topology
DPDT Circuit
10MHz ~ 2.5GHz Frequency Range
15dB Isolation
1.6dB Insertion Loss
2.5GHz Test Frequency
20dBm P1dB
50Ohm Impedance
1.5V ~ 3.6V Voltage - Supply