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R1LV0808ASB-5SI#B0

Renesas R1LV0808ASB-5SI#B0

1M x 855 ns-40°C ~ 85°C(TA)

比较
R1LV0808ASB-5SI#B0
IC SRAM 8MBIT PARALLEL 44TSOP II
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比较

¥18.55

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The R1LV0416DSB-7LI#S0 is IC SRAM 4MBIT 70NS 48FBGA, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 44-TSOP (0.400", 10.16mm Width) Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA), that offers Interface features such as Parallel, Voltage Supply is designed to work in 2.7 V ~ 3.6 V, as well as the 44-TSOP II Supplier Device Package, the device can also be used as 4M (256K x 16) Memory Size. In addition, the Memory Type is SRAM, the device is offered in 70ns Speed, the device has a RAM of Format Memory.

R1LV0416DSD-5SK with EDA / CAD Models manufactured by RENESAS. The R1LV0416DSD-5SK is available in TSSOP Package, is part of the IC Chips.

Features

Volatile Memory Type
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3V
I/O Type: COMMON
Freguency at 1MHz
1MHz terminals

Surface Mount Mounting Type

Applications


There are a lot of Renesas Electronics America
R1LV0808ASB-5SI#B0 Memory applications.

  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
  • workstations,
  • DVD disk buffer
产品属性
全选
包装: 托盘
部件状态: 停产
可编程: 未验证
存储器类型: 易失
存储器格式: SRAM
技术: SRAM
存储容量: 8Mb
存储器组织: 1M x 8
存储器接口: 并联
单词、页面的写入周期时间: 55ns
访问时间: 55 ns
电源电压: 2.7V ~ 3.6V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商器件封装: 44-TSOP II
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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