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ISL95808HRZ-T

Renesas ISL95808HRZ-T

半桥24.5V ~ 5.5V

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ISL95808HRZ-T
IC GATE DRVR HALF-BRIDGE 8DFN
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¥0.48

价格更新:2025-03-10

博斯克质量保证

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产品详情

Overview

The ISL95808HRZ-T is a high frequency, dual MOSFET driver with low shutdown current, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that require high efficiency and excellent thermal performance. The driver, combined with an Intersil multiphase Buck PWM controller, forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors. The ISL95808HRZ-T features a 4A typical sinking current for the lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the phase node. This prevents shoot-through power loss caused by the high dv/dt of phase voltages. The operating voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies. The ISL95808HRZ-T also features a three-state PWM input. This PWM input, working together with Intersil’s multiphase PWM controllers, will prevent negative voltage output during CPU shutdown. This feature eliminates a protective Schottky diode usually seen in microprocessor power systems. MOSFET gates can be efficiently switched up to 2MHz using the ISL95808. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns. Bootstrapping is implemented with an internal Schottky diode. This reduces system cost and complexity, while allowing for the use of higher performance MOSFETs. Adaptive shoot--through protection is integrated to prevent both MOSFETs from conducting simultaneously. A diode emulation feature is integrated in the ISL95808HRZ-T to enhance converter efficiency at light load conditions. This feature also allows for monotonic start-up into prebiased outputs. When diode emulation is enabled, the driver will allow discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turning off the low-side MOSFET gate. The ISL95808HRZ-T also features very low shutdown supply current (5V, 3μA) to ensure the low power consumption.

Features

Tape & Reel (TR) Package
Embedded in the Tape & Reel (TR) package
2 drivers

Surface Mount Mounting Type

Applications


There are a lot of Intersil (Renesas Electronics America)
ISL95808HRZ-T gate drivers applications.

  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
  • Motor Controls
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 同步
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 4.5V ~ 5.5V
电流 - 峰值输出(灌入,拉出): 2A,2A
输入类型: 非反相
最大高压侧电压(自启动): 33 V
上升/下降时间(典型值): 8ns,8ns
工作温度: -10°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-VFDFN 裸露焊盘
供应商器件封装: 8-DFN(2x2)
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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