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ISL6700IR-T

Renesas ISL6700IR-T

半桥29V ~ 15V

比较
ISL6700IR-T
HALF BRIDGE BASED MOSFET DRIVER
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¥5.00

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The ISL6700IR is an 80V/1.25A peak, medium frequency, low cost, half-bridge driver IC available in 8-lead SOIC and 12-lead QFN plastic packages. The low-side and high-side gate drivers are independently controlled and matched to 25ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. Non-latching, level-shift translation is used to control the upper drive circuit. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

Features

Bulk Package
Embedded in the Tape & Reel (TR) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 80V

Surface Mount Mounting Type

Applications


There are a lot of Renesas Electronics America Inc.
ISL6700IR-T gate drivers applications.

  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
产品属性
全选
包装: 散装
部件状态: 停产
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 9V ~ 15V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(灌入,拉出): 1.4A,1.3A
输入类型: 非反相
最大高压侧电压(自启动): 80 V
上升/下降时间(典型值): 5ns,5ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 12-VQFN 裸露焊盘
供应商器件封装: 12-QFN(4x4)
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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