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ISL6612CRZ-T

Renesas ISL6612CRZ-T

半桥210.8V ~ 13.2V

比较
ISL6612CRZ-T
IC GATE DRVR HALF-BRIDGE 10DFN
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¥3.03

价格更新:一个月前

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产品详情

Overview

The ISL6612CRZ and ISL6613 are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612CRZ drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613 drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during startup. The over-temperature protection feature prevents failures resulting from excessive power dissipation by shutting off the outputs when its junction temperature exceeds +150°C (typically). The driver resets once its junction temperature returns to +108°C (typically). These drivers also feature a three-state PWM input which, working together with Intersil's multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

Features

Tape & Reel (TR) Package
Embedded in the Cut Tape (CT) package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 36V

Surface Mount Mounting Type

Applications


There are a lot of Renesas Electronics America Inc.
ISL6612CRZ-T gate drivers applications.

  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
可编程: 未验证
驱动配置: 半桥
通道类型: 同步
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 10.8V ~ 13.2V
电流 - 峰值输出(灌入,拉出): 1.25A,2A
输入类型: 非反相
最大高压侧电压(自启动): 36 V
上升/下降时间(典型值): 26ns,18ns
工作温度: 0°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 10-VFDFN 裸露焊盘
供应商器件封装: 10-DFN(3x3)
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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