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ISL6609AIRZ

Renesas ISL6609AIRZ

半桥24.5V ~ 5.5V

比较
ISL6609AIRZ
IC GATE DRVR HALF-BRIDGE 8QFN
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比较

¥26.61

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6609A's bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.

Features

Tube Package
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 36V

Surface Mount Mounting Type

Applications


There are a lot of Renesas Electronics America Inc.
ISL6609AIRZ gate drivers applications.

  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
产品属性
全选
包装: 管件
部件状态: 停产
可编程: 未验证
驱动配置: 半桥
通道类型: 同步
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 4.5V ~ 5.5V
逻辑低电平和高电平的电压电平: 1V,2V
电流 - 峰值输出(灌入,拉出): -,4A
输入类型: 非反相
最大高压侧电压(自启动): 36 V
上升/下降时间(典型值): 8ns,8ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-VQFN 裸露焊盘
供应商器件封装: 8-QFN(3x3)
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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