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ISL6605CBZ

Renesas ISL6605CBZ

半桥24.5V ~ 5.5V

比较
ISL6605CBZ
HALF BRIDGE BASED MOSFET DRIVER,
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¥0.99

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The ISL6605CBZ is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multiphase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V) and minimizes low driver switching losses for high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3000pF load with an 8ns propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6605CBZ features 4A typical sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase node. The ISL6605CBZ also features a Three-State PWM input that, working together with Intersil Multiphase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed-output-voltage damage.

Features

Bulk Package
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 33V

Surface Mount Mounting Type

Applications


There are a lot of Renesas Electronics America Inc.
ISL6605CBZ gate drivers applications.

  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
产品属性
全选
包装: 散装
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 同步
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 4.5V ~ 5.5V
逻辑低电平和高电平的电压电平: 1V,2V
电流 - 峰值输出(灌入,拉出): 2A,2A
输入类型: 非反相
最大高压侧电压(自启动): 33 V
上升/下降时间(典型值): 8ns,8ns
工作温度: 0°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

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配件发货: 25M+

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