Renesas ISL6146DFUZ

N+1 ORing 控制器N 通道

Overview

The ISL6146DFUZ-T represents a family of OR-ing MOSFET controllers capable of OR-ing voltages from 1V to 18V. Together with suitably sized N-channel power MOSFETs, the ISL6146DFUZ-T increases power distribution efficiency when replacing a power OR-ing diode in high current applications. It provides gate drive voltage for the MOSFET(s) with a fully integrated charge pump. The ISL6146DFUZ-T allows users to adjust with external resistor(s) the VOUT - VIN trip point, which adjusts the control sensitivity to system power supply noise. An open drain FAULT pin will indicate if a conditional or FET fault has occurred. The ISL6146A and ISL6146B are optimized for very low voltage operation, down to 1V with an additional independent bias of 3V or greater. The ISL6146C provides a voltage compliant mode of operation down to 3V with programmable undervoltage lock out and overvoltage protection threshold levels. The ISL6146D and ISL6146E are like the ISL6146A and ISL6146B respectively, but do not have conduction state reporting via the fault output.

Features

Tube Package
in a 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) case
FET Type: N-Channel
8 terminations

Surface Mount Mounting Type

Applications

There are a lot of Renesas Electronics America Inc.
ISL6146DFUZ Ideal Diode controller applications.

• Automotive battery protection
• ADAS domain controller
• Camera ECU
• Head Unit
• USB HUBs
• Active ORing for redundant power
• Factory automation and control - PLC digital output modules
• Industrial motor drives
• Industrial transport
• Power supply reverse polarity protection