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ISL2111ABZ

Renesas ISL2111ABZ

半桥28V ~ 14V

比较
ISL2111ABZ
IC GATE DRVR HALF-BRIDGE 8SOIC
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比较

¥6.63

价格更新:一个月前

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产品详情

Overview

The ISL2110, ISL2111ABZ are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail.The ISL2110, ISL2111ABZ are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2111, like those of the ISL2110, can now safely swing to the VDD supply rail.

Features

Tube Package
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

Surface Mount Mounting Type

Applications


There are a lot of Renesas Electronics America Inc.
ISL2111ABZ gate drivers applications.

  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
产品属性
全选
包装: 管件
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 8V ~ 14V
逻辑低电平和高电平的电压电平: 1.4V,2.2V
电流 - 峰值输出(灌入,拉出): 3A,4A
输入类型: 非反相
最大高压侧电压(自启动): 114 V
上升/下降时间(典型值): 9ns,7.5ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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