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HIP2101EIBZ

Renesas HIP2101EIBZ

半桥29V ~ 14V

比较
HIP2101EIBZ
IC GATE DRVR HALF-BRIDGE 8SOIC
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比较

¥0.62

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The HIP2101EIBZ is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

Features

Tube Package
2 drivers
8 pins

Surface Mount Mounting Type

Applications


There are a lot of Intersil (Renesas Electronics America)
HIP2101EIBZ gate drivers applications.

  • PCMCIA applications
  • A/D drivers
  • Line drivers
  • Portable computers
  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
产品属性
全选
包装: 管件
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 9V ~ 14V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(灌入,拉出): 2A,2A
输入类型: 非反相
最大高压侧电压(自启动): 114 V
上升/下降时间(典型值): 10ns,10ns
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)裸露焊盘
供应商器件封装: 8-SOIC-EP
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics America Inc.是Renesas Electronics Corporation在美国的子公司,负责在北美市场的设计、开发、销售和技术支持。总部位于加利福尼亚州圣何塞。

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