Renesas 71V632S6PFG

64K x 326 ns0°C ~ 70°C（TA）

Overview

The 71V632S6PFG 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632S6PFG SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Features

Volatile Memory Type
Package / Case: TQFP
100 Pins
Operating Supply Voltage:3.3V
Additional Feature:ALSO REQUIRES 3.3V I/O SUPPLY
I/O Type: COMMON
Freguency at 83MHz
83MHz terminals

Surface Mount Mounting Type

Applications

There are a lot of Integrated Device Technology (IDT)
71V632S6PFG Memory applications.

• Cache memory
• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications