Renesas 71V35761S166BGGI

128K x 363.5 ns-40°C ~ 85°C（TA）

Overview

The 71V35761S166BGGI 3.3V CMOS SRAM is organized as 128K x 36. The 71V35761S166BGGI SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Features

Volatile Memory Type
Package / Case: BGA
119 Pins
Operating Supply Voltage:3.3V
Additional Feature:PIPELINED ARCHITECTURE
I/O Type: COMMON
Freguency at 166MHz
166MHz terminals

Surface Mount Mounting Type

Applications

There are a lot of Integrated Device Technology (IDT)
71V35761S166BGGI Memory applications.

• Cache memory
• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications