Renesas 6116SA150DB

2K x 8150 ns-55°C ~ 125°C（TA）

Overview

The 6116SA150DB 5V CMOS SRAM is organized as 2K x 8. The 6116SA150DB offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Features

Volatile Memory Type
Package / Case: 24-CDIP (0.600, 15.24mm)

Through Hole Mounting Type

Applications

There are a lot of Renesas Electronics America Inc.
6116SA150DB Memory applications.

• Cache memory
• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications