Renesas 2SJ355-T1-AZ

P 通道30 V2A（Ta）2V @ 1mA表面贴装型

Overview

The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.

 • Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A

Features

Bulk Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
2A (Ta) Current - Continuous Drain (Id) @ 25°C
350mOhm @ 1A, 10V Rds On (Max) @ Id, Vgs
2V @ 1mA Vgs(th) (Max) @ Id
12.2 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
300 pF @ 10 V Input Capacitance (Ciss) (Max) @ Vds
Surface Mount Mounting Type