ON VEC2616-TL-H-Z

MOSFET（金属氧化物）逻辑电平栅极，4V 驱动N 和 P 沟道60V3A，2.5A80 毫欧 @ 1.5A，10V

Overview

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate, 4V Drive FET Feature
60V Drain to Source Voltage (Vdss)
3A, 2.5A Current - Continuous Drain (Id) @ 25°C
80mOhm @ 1.5A, 10V Rds On (Max) @ Id, Vgs
10nC @ 10V Gate Charge (Qg) (Max) @ Vgs
505pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
1W Power - Max
Surface Mount Mounting Type