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TF262TH-5-TL-H

ON TF262TH-5-TL-H

1 mA3-SMD,扁平引线

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onsemi
TF262TH-5-TL-H
JFET N-CH 1MA VTFP
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¥0.29

价格更新:一个月前

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产品详情

Overview

TF262TH-4-TL-H with pin details, that includes TF262TH Series, they are designed to operate with a Tape & Reel (TR) Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 3-SMD, Flat Leads, Mounting Type is designed to work in Surface Mount, as well as the VTFP Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is N-Channel, the device is offered in 100mW Power Max, the device has a 140μA @ 2V of Current Drain Idss Vds Vgs=0, and Current Drain Id Max is 1mA, and the Voltage Cutoff VGS off Id is 200mV @ 1μA, and Input Capacitance Ciss Vds is 3.5pF @ 2V, and the Pd Power Dissipation is 100 mW, and Id Continuous Drain Current is 1 mA, and the Vds Drain Source Breakdown Voltage is - 20 V, and Transistor Polarity is N-Channel, and the Vgs Gate Source Breakdown Voltage is - 20 V, and Gate Source Cutoff Voltage is - 1 V.

TF261RM-E2 with circuit diagram manufactured by ROHM. The TF261RM-E2 is available in SSOP24 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
210 µA @ 2 V Current - Drain (Idss) @ Vds (Vgs=0)
1 mA Current Drain (Id) - Max
200 mV @ 1 µA Voltage - Cutoff (VGS off) @ Id
3.5pF @ 2V Input Capacitance (Ciss) (Max) @ Vds
100 mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
VTFP Supplier Device Package
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 210 µA @ 2 V
漏极电流 (Id) - 最大值: 1 mA
栅极-源极关态电压和漏极电流时的截止电压: 200 mV @ 1 µA
Vds 时的最大输入电容 (Ciss): 3.5pF @ 2V
最大功率: 100 mW
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 3-SMD,扁平引线
供应商器件封装: VTFP
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onsemi

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