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TF256-5-TL-H

ON TF256-5-TL-H

1 mASOT-1123

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onsemi
TF256-5-TL-H
JFET N-CH 1MA 3USFP
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产品详情

Overview

The TF252TH-5-TL-H is JFET N-CH 0.1W 3VTFP, that includes TF252TH Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Package Case is shown on datasheet note for use in a 3-SMD, Flat Leads, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 3-VTFP, as well as the N-Channel FET Type, the device can also be used as 100mW Power Max. In addition, the Current Drain Idss Vds Vgs=0 is 210μA @ 2V, the device is offered in 1mA Current Drain Id Max, the device has a 1V @ 1μA of Voltage Cutoff VGS off Id, and Input Capacitance Ciss Vds is 3.1pF @ 2V.

TF252TH-6-H-TL-H with circuit diagram manufactured by SANYO. The TF252TH-6-H-TL-H is available in VTFP Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package


  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1μA

  • Continuous Drain Current (ID): 1mA

  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V

  • Current - Drain (Idss) @ Vds (Vgs=0): 240μA @ 2V

  • Max Power Dissipation: 30mW

  • Terminal Finish: Tin/Bismuth (Sn/Bi)



Surface Mount Mounting Type

Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 240 µA @ 2 V
漏极电流 (Id) - 最大值: 1 mA
栅极-源极关态电压和漏极电流时的截止电压: 100 mV @ 1 µA
Vds 时的最大输入电容 (Ciss): 3.1pF @ 2V
最大功率: 30 mW
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SOT-1123
供应商器件封装: 3-USFP
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