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TF256-3-TL-H

ON TF256-3-TL-H

1 mASOT-1123

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onsemi
TF256-3-TL-H
JFET N-CH 1MA 3USFP
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¥0.98

价格更新:一个月前

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产品详情

Overview

The TF252TH-5-TL-H is JFET N-CH 0.1W 3VTFP, that includes TF252TH Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Package Case is shown on datasheet note for use in a 3-SMD, Flat Leads, that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 3-VTFP, as well as the N-Channel FET Type, the device can also be used as 100mW Power Max. In addition, the Current Drain Idss Vds Vgs=0 is 210μA @ 2V, the device is offered in 1mA Current Drain Id Max, the device has a 1V @ 1μA of Voltage Cutoff VGS off Id, and Input Capacitance Ciss Vds is 3.1pF @ 2V.

TF252TH-6-H-TL-H with circuit diagram manufactured by SANYO. The TF252TH-6-H-TL-H is available in VTFP Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package


High gain: GV=2.7dB type (VCC=2V, RL=2.2k2, Cin=5pF, VIN=10mV, f=1kHz)

UItrasmall package facilitates miniaturization in end products [ 1.0mmx0.6mmx0.27mm (max 0.3mm)] 

Best suited for use in electret condenser microphone for audio equipment and telephones

Excellent transient characteristics

Adoption of FBET process

Halogen-free compliance



Surface Mount Mounting Type

Applications


Communications equipment 

Wireless infrastructure 

Industrial Industrial transport (non-car & non-light truck) 

Personal electronics 

PC & notebooks


产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 100 µA @ 2 V
漏极电流 (Id) - 最大值: 1 mA
栅极-源极关态电压和漏极电流时的截止电压: 100 mV @ 1 µA
Vds 时的最大输入电容 (Ciss): 3.1pF @ 2V
最大功率: 30 mW
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SOT-1123
供应商器件封装: 3-USFP
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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