ON QSA157

880nm光电探测器 - 逻辑输出推挽式

Overview

The QS8M51TR is MOSFET N/P-CH 100V 2A/1.5A TSMT8, that includes QS8M51 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SMD, Flat Lead, Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in TSMT8 Supplier Device Package, the device has a N and P-Channel of FET Type, and Power Max is 1.5W, and the Transistor Type is 1 N-Channel 1 P-Channel, and Drain to Source Voltage Vdss is 100V, and the Input Capacitance Ciss Vds is 290pF @ 25V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 2A, 1.5A, and Rds On Max Id Vgs is 325 mOhm @ 2A, 10V, and the Vgs th Max Id is 2.5V @ 1mA, and Gate Charge Qg Vgs is 4.7nC @ 5V, and the Id Continuous Drain Current is 2 A - 1.5 A, and Vds Drain Source Breakdown Voltage is 100 V - 100 V, and the Rds On Drain Source Resistance is 325 mOhms, and Transistor Polarity is N-Channel P-Channel.

QS98001-1AP6 with circuit diagram manufactured by DESTINY. The QS98001-1AP6 is available in DIP-28 Package, is part of the IC Chips.

Features