ON PN4117A_D26Z

40 VTO-226-3，TO-92-3（TO-226AA）成形引线

Overview

The 2N4117A is MOSFET N-CH 40V 30UA TO-206AF, that includes Bulk Packaging, they are designed to operate with a Through Hole Mounting Style, Package Case is shown on datasheet note for use in a TO-206AF, TO-72-4 Metal Can, that offers Technology features such as Si, Mounting Type is designed to work in Through Hole, as well as the TO-206AF (TO-72) Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is N-Channel, the device is offered in 300mW Power Max, the device has a 40V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 30μA @ 10V, and the Voltage Cutoff VGS off Id is 600mV @ 1nA, and Input Capacitance Ciss Vds is 3pF @ 10V, and the Pd Power Dissipation is 300 mW, and Id Continuous Drain Current is 1 nA, and the Vds Drain Source Breakdown Voltage is 10 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 70 uS, and Vgs Gate Source Breakdown Voltage is - 40 V, and the Gate Source Cutoff Voltage is - 1.8 V.

2N4093UB with EDA / CAD Models manufactured by Microsemi. is part of the JFETs (Junction Field Effect), , and with support for JFET N Channel Jfet, JFET N-Channel 40V 360mW Surface Mount 3-UB (3.09x2.45).

Features

Tape & Reel (TR) Package
40 V Voltage - Breakdown (V(BR)GSS)
30 µA @ 10 V Current - Drain (Idss) @ Vds (Vgs=0)
600 mV @ 1 nA Voltage - Cutoff (VGS off) @ Id
3pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
350 mW Power - Max
Through Hole Mounting Type