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NVMFD5877NLWFT3G

ON NVMFD5877NLWFT3G

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)60V6A39 毫欧 @ 7.5A,10V3V @ 250µA

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NVMFD5877NLWFT3G
MOSFET 2N-CH 60V 6A SO8FL
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¥20.60

价格更新:一个月前

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产品详情

Overview

NVMFD5875NLT3G with pin details, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a 8-PowerTDFN Package Case, Technology is shown on datasheet note for use in a Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) Supplier Device Package, the device can also be used as 2 N-Channel (Dual) FET Type. In addition, the Power Max is 3.2W, the device is offered in 60V Drain to Source Voltage Vdss, the device has a 540pF @ 25V of Input Capacitance Ciss Vds, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 7A, and Rds On Max Id Vgs is 33 mOhm @ 7.5A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 20nC @ 10V.

NVMFD5875NLWFT3G with circuit diagram, that includes 7A Current Continuous Drain Id 25°C, they are designed to operate with a 60V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 20nC @ 10V, as well as the 540pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerTDFN Package Case, the device has a Tape & Reel (TR) Alternate Packaging of Packaging, and Power Max is 3.2W, and the Rds On Max Id Vgs is 33 mOhm @ 7.5A, 10V, and Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), and the Technology is Si, and Vgs th Max Id is 3V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
39mOhm @ 7.5A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
20nC @ 10V Gate Charge (Qg) (Max) @ Vgs
540pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
3.2W Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: Automotive, AEC-Q101
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 60V
25°C 时电流 - 连续漏极 (Id): 6A
漏极电流和栅极至源极电压下的最大导通电阻: 39 毫欧 @ 7.5A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 20nC @ 10V
Vds 时的最大输入电容 (Ciss): 540pF @ 25V
最大功率: 3.2W
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-PowerTDFN
供应商器件封装: 8-DFN(5x6)双标记(SO8FL-双通道)
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onsemi

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