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NVMFD5873NLWFT1G

ON NVMFD5873NLWFT1G

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)60V10A13 毫欧 @ 15A,10V2.5V @ 250µA

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NVMFD5873NLWFT1G
MOSFET 2N-CH 60V 10A SO8FL
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产品详情

Overview

NVMFD5853NLWFT1G with pin details, that includes NVMFD5853NL Series, they are designed to operate with a Tape & Reel (TR) Packaging, Package Case is shown on datasheet note for use in a 8-PowerTDFN, that offers Technology features such as Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), as well as the Surface Mount Mounting Type, the device can also be used as 2 Channel Number of Channels. In addition, the Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), the device is offered in 2 N-Channel (Dual) FET Type, the device has a 3W of Power Max, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 40V, and Input Capacitance Ciss Vds is 1100pF @ 25V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 12A, and the Rds On Max Id Vgs is 10 mOhm @ 15A, 10V, and Vgs th Max Id is 2.4V @ 250μA, and the Gate Charge Qg Vgs is 23nC @ 10V, and Transistor Polarity is N-Channel.

NVMFD5853NWFT1G with circuit diagram, that includes 12A Current Continuous Drain Id 25°C, they are designed to operate with a 40V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 24nC @ 10V, as well as the 1225pF @ 25V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device is offered in 8-PowerTDFN Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 3.1W, and the Rds On Max Id Vgs is 10 mOhm @ 15A, 10V, and Series is NVMFD5853N, and the Supplier Device Package is 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical), and Technology is Si, and the Vgs th Max Id is 4V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
60V Drain to Source Voltage (Vdss)
10A Current - Continuous Drain (Id) @ 25°C
13mOhm @ 15A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
30.5nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1560pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
3.1W Power - Max
Surface Mount Mounting Type
产品属性
全选
型号系列: Automotive, AEC-Q101
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 60V
25°C 时电流 - 连续漏极 (Id): 10A
漏极电流和栅极至源极电压下的最大导通电阻: 13 毫欧 @ 15A,10V
漏极电流下的最大栅极阈值电压: 2.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 30.5nC @ 10V
Vds 时的最大输入电容 (Ciss): 1560pF @ 25V
最大功率: 3.1W
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-PowerTDFN
供应商器件封装: 8-DFN(5x6)双标记(SO8FL-双通道)
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