ON NVMD6P02R2G

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V4.8A33 毫欧 @ 6.2A，4.5V1.2V @ 250µA

Overview

The NVMD6N04R2G is MOSFET 2N-CH 40V 4.6A 8-SOIC, that includes NTMD6N04 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.019048 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-SOIC Supplier Device Package, the device has a 2 N-Channel (Dual) of FET Type, and Power Max is 1.29W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 40V, and the Input Capacitance Ciss Vds is 900pF @ 32V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 4.6A, and Rds On Max Id Vgs is 34 mOhm @ 5.8A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 30nC @ 10V, and the Id Continuous Drain Current is 5.8 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Rds On Drain Source Resistance is 34 mOhms, and Transistor Polarity is N-Channel.

The NVMD6N03R2G is MOSFET 2N-CH 30V 6A 8SOIC, that includes 6A Current Continuous Drain Id 25°C, they are designed to operate with a 30V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 30nC @ 10V, as well as the 950pF @ 24V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in 8-SOIC (0.154", 3.90mm Width) Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 1.29W, and the Rds On Max Id Vgs is 32 mOhm @ 6A, 10V, and Supplier Device Package is 8-SOIC, and the Vgs th Max Id is 2.5V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
4.8A Current - Continuous Drain (Id) @ 25°C
33mOhm @ 6.2A, 4.5V Rds On (Max) @ Id, Vgs
1.2V @ 250µA Vgs(th) (Max) @ Id
35nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
1700pF @ 16V Input Capacitance (Ciss) (Max) @ Vds
750mW Power - Max
Surface Mount Mounting Type