ON NVMD6N03R2G

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V6A32 毫欧 @ 6A，10V2.5V @ 250µA

Overview

NVMD3P03R2G with pin details, that includes NTMD3P03 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.019048 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 8-SOIC (0.154", 3.90mm Width), as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 8-SOIC Supplier Device Package, the device has a 2 P-Channel (Dual) of FET Type, and Power Max is 730mW, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 750pF @ 24V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 2.34A, and the Rds On Max Id Vgs is 85 mOhm @ 3.05A, 10V, and Vgs th Max Id is 2.5V @ 250μA, and the Gate Charge Qg Vgs is 25nC @ 10V, and Id Continuous Drain Current is - 3.05 A, and the Vds Drain Source Breakdown Voltage is - 30 V, and Rds On Drain Source Resistance is 85 mOhms, and the Transistor Polarity is P-Channel.

NVM3060 with circuit diagram manufactured by ITT. The NVM3060 is available in DIP8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
32mOhm @ 6A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
30nC @ 10V Gate Charge (Qg) (Max) @ Vgs
950pF @ 24V Input Capacitance (Ciss) (Max) @ Vds
1.29W Power - Max
Surface Mount Mounting Type