联系我们
中文
NTUD3171PZT5G

ON NTUD3171PZT5G

MOSFET(金属氧化物)逻辑电平门2 个 P 沟道(双)20V200mA5 欧姆 @ 100mA,4.5V1V @ 250µA

比较
onsemi
NTUD3171PZT5G
MOSFET 2P-CH 20V 0.2A SOT-963
paypalvisamastercarddiscover
upsdhlsf
比较

¥1.82

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The NTUD3169CZT5G is MOSFET N/P-CH 20V SOT-963, that includes NTUD3169CZ Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-963, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in SOT-963 Supplier Device Package, the device has a N-Channel P-Channel of Configuration, and FET Type is N and P-Channel, and the Power Max is 125mW, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 12.5pF @ 15V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 220mA, 200mA, and the Rds On Max Id Vgs is 1.5 Ohm @ 100mA, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Pd Power Dissipation is 200 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 80 ns 145 ns, and the Rise Time is 25.5 nd 46 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 220 mA, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 1.5 Ohms 5 Ohms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 142 ns 196 ns, and Typical Turn On Delay Time is 16.5 ns 26 ns, and the Forward Transconductance Min is 0.48 S 0.35 S, and Channel Mode is Enhancement.

The NTUD3129PT5G is MOSFET 2P-CH 20V 0.14A SOT-963, that includes 140mA Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, that offers FET Type features such as 2 P-Channel (Dual), Input Capacitance Ciss Vds is designed to work in 12pF @ 15V, as well as the Surface Mount Mounting Type, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Package Case is SOT-963, the device is offered in Tape & Reel (TR) Packaging, the device has a 125mW of Power Max, and Rds On Max Id Vgs is 5 Ohm @ 100mA, 4.5V, and the Supplier Device Package is SOT-963, and Vgs th Max Id is 1V @ 250μA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
200mA Current - Continuous Drain (Id) @ 25°C
5Ohm @ 100mA, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
13.5pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
125mW Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 个 P 沟道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 200mA
漏极电流和栅极至源极电压下的最大导通电阻: 5 欧姆 @ 100mA,4.5V
漏极电流下的最大栅极阈值电压: 1V @ 250µA
Vds 时的最大输入电容 (Ciss): 13.5pF @ 15V
最大功率: 125mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: SOT-963
供应商器件封装: SOT-963
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z