ON NTMFD4C86NT3G

MOSFET（金属氧化物）2 N 沟道（双）非对称型30V11.3A，18.1A5.4 毫欧 @ 30A，10V2.2V @ 250µA

Overview

NTMFD4C85NT3G with pin details, that includes Tape & Reel (TR) Alternate Packaging Packaging, they are designed to operate with a 8-PowerTDFN Package Case, Technology is shown on datasheet note for use in a Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), Mounting Type is designed to work in Surface Mount, as well as the 8-DFN (5x6) Supplier Device Package, the device can also be used as 2 N-Channel (Dual) Asymmetrical FET Type. In addition, the Power Max is 1.13W, the device is offered in 30V Drain to Source Voltage Vdss, the device has a 1960pF @ 15V of Input Capacitance Ciss Vds, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 15.4A, 29.7A, and Rds On Max Id Vgs is 3 mOhm @ 20A, 10V, and the Vgs th Max Id is 2.1V @ 250μA, and Gate Charge Qg Vgs is 32nC @ 10V.

NTMFD4C50NT3G with circuit diagram, that includes Reel Packaging, they are designed to operate with a NTMFD4C50N Series, Technology is shown on datasheet note for use in a Si.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
30V Drain to Source Voltage (Vdss)
11.3A, 18.1A Current - Continuous Drain (Id) @ 25°C
5.4mOhm @ 30A, 10V Rds On (Max) @ Id, Vgs
2.2V @ 250µA Vgs(th) (Max) @ Id
22.2nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1153pF @ 15V Input Capacitance (Ciss) (Max) @ Vds
1.1W Power - Max
Surface Mount Mounting Type