ON NTLJD2105LTBG

MOSFET（金属氧化物）N 和 P 沟道8V2.5A50 毫欧 @ 4A，4.5V1V @ 250µA

Overview

The NTLJD2104PTAG is MOSFET 2P-CH 12V 2.4A 6WDFN, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 6-WDFN Exposed Pad Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 6-WDFN (2x2), as well as the 2 P-Channel (Dual) FET Type, the device can also be used as 700mW Power Max. In addition, the Drain to Source Voltage Vdss is 12V, the device is offered in 467pF @ 6V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 2.4A, and the Rds On Max Id Vgs is 90 mOhm @ 3A, 4.5V, and Vgs th Max Id is 800mV @ 250μA, and the Gate Charge Qg Vgs is 8nC @ 4.5V.

NTLJ3113PT1G with circuit diagram manufactured by ON. The NTLJ3113PT1G is available in QFN Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
8V Drain to Source Voltage (Vdss)
2.5A Current - Continuous Drain (Id) @ 25°C
50mOhm @ 4A, 4.5V Rds On (Max) @ Id, Vgs
1V @ 250µA Vgs(th) (Max) @ Id
520mW Power - Max
Surface Mount Mounting Type