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NTLGD3502NT1G

ON NTLGD3502NT1G

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)20V4.3A,3.6A60 毫欧 @ 4.3A,4.5V2V @ 250µA

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NTLGD3502NT1G
MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
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¥3.25

价格更新:一个月前

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产品详情

Overview

The NTL4502NT1 is MOSFET 4N-CH 24V 11.4A 16PIN, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 16-PowerQFN Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in PlnPAK, as well as the 4 N-Channel (H-Bridge) FET Type, the device can also be used as 1.7W Power Max. In addition, the Drain to Source Voltage Vdss is 24V, the device is offered in 1605pF @ 20V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 11.4A, and the Rds On Max Id Vgs is 11 mOhm @ 15A, 10V, and Vgs th Max Id is 2V @ 250μA, and the Gate Charge Qg Vgs is 13nC @ 4.5V.

The NTL1 is Power Transformers TRANSFRMER LINE PCB VERT 1:1 RATIO manufactured by Neutrik. is part of the Power Transformers, , and with support for Power Transformers TRANSFRMER LINE PCB VERT 1:1 RATIO.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
4.3A, 3.6A Current - Continuous Drain (Id) @ 25°C
60mOhm @ 4.3A, 4.5V Rds On (Max) @ Id, Vgs
2V @ 250µA Vgs(th) (Max) @ Id
4nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
480pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1.74W Power - Max
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 20V
25°C 时电流 - 连续漏极 (Id): 4.3A,3.6A
漏极电流和栅极至源极电压下的最大导通电阻: 60 毫欧 @ 4.3A,4.5V
漏极电流下的最大栅极阈值电压: 2V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 4nC @ 4.5V
Vds 时的最大输入电容 (Ciss): 480pF @ 10V
最大功率: 1.74W
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 6-VDFN 裸露焊盘
供应商器件封装: 6-DFN(3x3)
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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