ON NTGD3133PT1G

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）20V1.6A145 毫欧 @ 2.2A，4.5V1.4V @ 250µA

Overview

The NTGD1100LT1G is MOSFET N/P-CH 8V 3.3A 6-TSOP, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a SOT-23-6 Thin, TSOT-23-6 Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Output Type features such as P-Channel, Interface is designed to work in On/Off, as well as the 6-TSOP Supplier Device Package, the device can also be used as 1899/12/30 1:01:00 Ratio Input:Output. In addition, the Number of Outputs is 1, the device is offered in High Side Output Configuration, the device has a 40 mOhm of Rds On Typ, and Voltage Load is 1.8 V ~ 8 V, and the Current Output Max is 3.3A, and Switch Type is General Purpose.

NTGD3122CT1G with circuit diagram manufactured by ON. The NTGD3122CT1G is available in TSOP-6 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
20V Drain to Source Voltage (Vdss)
1.6A Current - Continuous Drain (Id) @ 25°C
145mOhm @ 2.2A, 4.5V Rds On (Max) @ Id, Vgs
1.4V @ 250µA Vgs(th) (Max) @ Id
5.5nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs
400pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
560mW Power - Max
Surface Mount Mounting Type