ON NCD57090EDWR2G

容性耦合15000Vrms

Overview

ON Semiconductor NCD5700 and NCD5701BDR2G Insulated-Gate Bipolar Transistor (IGBT) Gate Drivers are high-current, high-performance devices for high power applications, such as solar inverters, motor control, and Uninterruptable Power Supplies (UPSs). These Gate Drivers are highly-integrated, offering a cost-effective solution by eliminating many external components.

Features

Tape & Reel (TR) Package
Capacitive Coupling Technology
1 Number of Channels
5000Vrms Voltage - Isolation
100kV/µs (Max) Common Mode Transient Immunity (Min)
90ns, 90ns Propagation Delay tpLH / tpHL (Max)
25ns Pulse Width Distortion (Max)
13ns, 13ns Rise / Fall Time (Typ)
6.5A, 6.5A Current - Output High, Low
6.5A Current - Peak Output
0V ~ 32V Voltage - Output Supply
Surface Mount Mounting Type
VDE Approval Agency