ON MMDF2C03HDR2G

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V4.1A，3A70 毫欧 @ 3A，10V3V @ 250µA

Overview

The MMDF2C03HDR2 is MOSFET N/P-CH 30V 4.1A/3A 8SOIC, that includes Cut Tape (CT) Packaging, they are designed to operate with a 8-SOIC (0.154", 3.90mm Width) Package Case, it has an Operating Temperature range of -55°C ~ 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOIC, as well as the N and P-Channel FET Type, the device can also be used as 2W Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in 630pF @ 24V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 4.1A, 3A, and the Rds On Max Id Vgs is 70 mOhm @ 3A, 10V, and Vgs th Max Id is 3V @ 250μA, and the Gate Charge Qg Vgs is 16nC @ 10V.

MMDF2C03HD(D2C03) with circuit diagram manufactured by ON. The MMDF2C03HD(D2C03) is available in SOP8 Package, is part of the IC Chips.

Features

? Longer Battery Life and Higher Efficiency with Ultra Low RDS(on)

? Logic ICs Can Drive the Logic Level Gate Drive

? Saves Board Space with Miniature SO-8 Surface Mount Package

? Bridge Circuit Use of Diodes Is Typical

? Diode Demonstrates Fast, Soft Recovery

? At Elevated Temperature, IDSS is Specified

? Specified Avalanche Energy

? Provided Mounting Instructions for SO-8 Package

? This device is lead-free.

Applications

Switching applications