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MMBFJ271

ON MMBFJ271

30 VTO-236-3,SC-59,SOT-23-3

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onsemi
MMBFJ271
JFET P-CH 30V SOT23-3
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¥1.03

价格更新:一个月前

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产品详情

Overview

The MMBFJ270 is JFET P-CH 30V 0.225W SOT23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 0.002116 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-236-3, SC-59, SOT-23-3, Mounting Type is designed to work in Surface Mount, as well as the SOT-23-3 Supplier Device Package, the device can also be used as Single Configuration. In addition, the FET Type is P-Channel, the device is offered in 225mW Power Max, the device has a 30V of Voltage Breakdown V BRGSS, and Current Drain Idss Vds Vgs=0 is 2mA @ 15V, and the Voltage Cutoff VGS off Id is 500mV @ 1nA, and Pd Power Dissipation is 225 mW, and the Transistor Polarity is P-Channel, and Forward Transconductance Min is 6 S to 15 S, and the Vgs Gate Source Breakdown Voltage is 30 V, and Gate Source Cutoff Voltage is 2 V.

MMBFJ270-NL with circuit diagram manufactured by FAIRCHILD. The MMBFJ270-NL is available in SOT23 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
30 V Voltage - Breakdown (V(BR)GSS)
6 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
1.5 V @ 1 nA Voltage - Cutoff (VGS off) @ Id
225 mW Power - Max
Surface Mount Mounting Type

Applications

 

low-level analog switching sample-and-hold circuits

chopper-stabilized amplifiers

 

MMBFJ271  Applications


This product is general usage and suitable for many different applications.



产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: P 通道
击穿电压(栅极-源极-源极): 30 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 6 mA @ 15 V
栅极-源极关态电压和漏极电流时的截止电压: 1.5 V @ 1 nA
最大功率: 225 mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商器件封装: SOT-23-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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