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MMBF4119

ON MMBF4119

40 VTO-236-3,SC-59,SOT-23-3

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onsemi
MMBF4119
JFET N-CH 40V SOT23-3
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产品详情

Overview

The MMBF4117 is JFET N-CH 40V 0.225W SOT23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a MMBF4117_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.002116 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Surface Mount Mounting Type, the device can also be used as SOT-23-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in N-Channel FET Type, the device has a 225mW of Power Max, and Voltage Breakdown V BRGSS is 40V, and the Current Drain Idss Vds Vgs=0 is 30μA @ 10V, and Voltage Cutoff VGS off Id is 600mV @ 1nA, and the Input Capacitance Ciss Vds is 3pF @ 10V, and Pd Power Dissipation is 225 mW, and the Transistor Polarity is N-Channel, and Forward Transconductance Min is 0.00007 S to 0.00021 S, and the Vgs Gate Source Breakdown Voltage is - 40 V, and Gate Source Cutoff Voltage is - 1.8 V.

MMBF4117/2N4117 with circuit diagram manufactured by TOS. The MMBF4117/2N4117 is available in SOT23 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package


  • Peak Reflow Temperature (Cel): NOT SPECIFIED

  • Transistor Application: SWITCHING

  • Transistor Element Material: SILICON

  • ECCN Code: EAR99



Surface Mount Mounting Type

Applications


  • General-purpose amplifier

  • Switching applications

  • Power management

  • Industrial


产品属性
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包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
击穿电压(栅极-源极-源极): 40 V
不同 Vds (Vgs=0) 时电流 - 漏极 (Idss): 200 µA @ 10 V
栅极-源极关态电压和漏极电流时的截止电压: 2 V @ 1 nA
Vds 时的最大输入电容 (Ciss): 3pF @ 10V
最大功率: 225 mW
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商器件封装: SOT-23-3
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onsemi

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