ON MMBD330T1G

肖特基 - 单30V200 mA1.5pF @ 15V，1MHz120 mW-55°C ~ 125°C（TJ）

Overview

This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.

Extremely low minority carrier lifetime. Very low capacitance. Low reverse leakage.

Features

Tape & Reel (TR) Package

120 mW Power Dissipation (Max)

Applications

There are a lot of ON Semiconductor
MMBD330T1G applications of RF diodes.

• RF voltage doubler
• Wearables
• Smart metering
• Set top boxes
• RF attenuators and switches
• Low-loss, high-power limiters
• Receiver protectors
• UHF mixer
• Sampling circuits
• Modulators