ON MCH6664-TL-W

MOSFET（金属氧化物）逻辑电平门2 个 P 沟道（双）30V1.5A325 毫欧 @ 800mA，10V2.6V @ 1mA

Overview

The MCH6663-TL-H is MOSFET N/P-CH 30V 1.8/1.5A MCPH6, that includes MCH6663 Series, they are designed to operate with a Tape & Reel (TR) Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-SMD, Flat Leads, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 6-MCPH of Supplier Device Package, and FET Type is N and P-Channel, and the Power Max is 800mW, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 30V, and Input Capacitance Ciss Vds is 88pF @ 10V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 1.8A, 1.5A, and the Rds On Max Id Vgs is 188 mOhm @ 900mA, 10V, and Gate Charge Qg Vgs is 2nC @ 10V, and the Pd Power Dissipation is 800 mW, and Id Continuous Drain Current is 1.8 A - 1.5 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 188 mOhms 325 mOhms, and the Transistor Polarity is N-Channel P-Channel.

MCH6662-TL-W with circuit diagram, that includes 2A Current Continuous Drain Id 25°C, they are designed to operate with a 20V Drain to Source Voltage Vdss, FET Feature is shown on datasheet note for use in a Logic Level Gate, 1.8V Drive, that offers FET Type features such as 2 N-Channel (Dual), Gate Charge Qg Vgs is designed to work in 1.8nC @ 4.5V, as well as the 128pF @ 10V Input Capacitance Ciss Vds, the device can also be used as Surface Mount Mounting Type, it has an Operating Temperature range of 150°C (TJ), the device is offered in 6-SMD, Flat Leads Package Case, the device has a Tape & Reel (TR) of Packaging, and Power Max is 800mW, and the Rds On Max Id Vgs is 160 mOhm @ 1A, 4.5V, and Supplier Device Package is SC-88FL/ MCPH6, and the Technology is Si, and Vgs th Max Id is 1.3V @ 1mA.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
1.5A Current - Continuous Drain (Id) @ 25°C
325mOhm @ 800mA, 10V Rds On (Max) @ Id, Vgs
2.6V @ 1mA Vgs(th) (Max) @ Id
2.2nC @ 10V Gate Charge (Qg) (Max) @ Vgs
82pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
800mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type