ON MCH6604-TL-E

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）50V250mA7.8 欧姆 @ 50mA，4V

Overview

The MCH6602-TL-E is MOSFET 2N-CH 30V 0.35A MCPH6, that includes MCH6602 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.000265 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 6-SMD, Flat Leads, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 6-MCPH of Supplier Device Package, and Configuration is Dual, and the FET Type is 2 N-Channel (Dual), and Power Max is 800mW, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 30V, and the Input Capacitance Ciss Vds is 7pF @ 10V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 350mA, and Rds On Max Id Vgs is 3.7 Ohm @ 80mA, 4V, and the Gate Charge Qg Vgs is 1.58nC @ 10V, and Pd Power Dissipation is 800 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Vgs Gate Source Voltage is 10 V, and Id Continuous Drain Current is 350 mA, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 3.7 Ohms, and the Transistor Polarity is N-Channel.

MCH6602-TL with circuit diagram manufactured by SANYO. The MCH6602-TL is available in SOT363 Package, is part of the FETs - Arrays.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
50V Drain to Source Voltage (Vdss)
250mA Current - Continuous Drain (Id) @ 25°C
7.8Ohm @ 50mA, 4V Rds On (Max) @ Id, Vgs
1.57nC @ 10V Gate Charge (Qg) (Max) @ Vgs
6.6pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
800mW Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type