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KST5550MTF

ON KST5550MTF

NPN600 mA140 V

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onsemi
KST5550MTF
TRANS NPN 140V 0.6A SOT23-3
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¥0.32

价格更新:一个月前

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产品详情

Overview

The KST5401MTF is TRANS PNP 150V 0.5A SOT-23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a KST5401MTF_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.002116 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-236-3, SC-59, SOT-23-3, as well as the Surface Mount Mounting Type, the device can also be used as SOT-23-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in 350mW Power Max, the device has a PNP of Transistor Type, and Current Collector Ic Max is 500mA, and the Voltage Collector Emitter Breakdown Max is 150V, and DC Current Gain hFE Min Ic Vce is 60 @ 50mA, 5V, and the Vce Saturation Max Ib Ic is 500mV @ 5mA, 50mA, and Current Collector Cutoff Max is 50nA (ICBO), and the Frequency Transition is 300MHz, and Pd Power Dissipation is 350 mW, it has an Maximum Operating Temperature range of + 150 C, and Collector Emitter Voltage VCEO Max is - 150 V, and the Transistor Polarity is PNP, and Collector Emitter Saturation Voltage is - 0.5 V, and the Collector Base Voltage VCBO is - 160 V, and Emitter Base Voltage VEBO is - 5 V, and the Maximum DC Collector Current is 0.5 A, and Gain Bandwidth Product fT is 300 MHz, and the Continuous Collector Current is - 0.5 A, and DC Collector Base Gain hfe Min is 60, and the DC Current Gain hFE Max is 240.

KST55 with circuit diagram manufactured by SAMSUNG. The KST55 is available in SOT-23SC-59 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
KST5550MTF applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
晶体管类型: NPN
集电极电流 (Ic)(最大值): 600 mA
最大集电极-发射极击穿电压: 140 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 250mV @ 5mA,50mA
电流 - 集电极截止(最大值): 100nA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 60 @ 10mA,5V
最大功率: 350 mW
频率 - 跃迁: 300MHz
安装类型: 表面贴装型
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商器件封装: SOT-23-3
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