ON J271

30 VTO-226-3，TO-92-3 标准主体（!--TO-226AA）

Overview

The J270 is JFET P-CH 30V 0.35W TO92, that includes Bulk Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA), Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in P-Channel FET Type, the device has a 350mW of Power Max, and Voltage Breakdown V BRGSS is 30V, and the Current Drain Idss Vds Vgs=0 is 2mA @ 15V, and Voltage Cutoff VGS off Id is 500mV @ 1nA, and the Pd Power Dissipation is 360 mW, and Id Continuous Drain Current is 5 mA, and the Vds Drain Source Breakdown Voltage is - 10 V, and Transistor Polarity is P-Channel, and the Forward Transconductance Min is 6 mS, and Vgs Gate Source Breakdown Voltage is - 30 V, and the Gate Source Cutoff Voltage is 2 V.

J270_D27Z with circuit diagram, that includes 2mA @ 15V Current Drain Idss Vds Vgs=0, they are designed to operate with a P-Channel FET Type, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Packaging is designed to work in Tape & Reel (TR), as well as the 350mW Power Max, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Voltage Breakdown V BRGSS is 30V, the device is offered in 500mV @ 1nA Voltage Cutoff VGS off Id.

Features

Bulk Package
30 V Voltage - Breakdown (V(BR)GSS)
6 mA @ 15 V Current - Drain (Idss) @ Vds (Vgs=0)
1.5 V @ 1 nA Voltage - Cutoff (VGS off) @ Id
350 mW Power - Max
Through Hole Mounting Type