ON J202_D74Z

40 VTO-226-3，TO-92-3（TO-226AA）成形引线

Overview

The J202 is JFET N-CH 40V 0.625W TO92, that includes Bulk Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-226-3, TO-92-3 (TO-226AA), Technology is designed to work in Si, as well as the Through Hole Mounting Type, the device can also be used as TO-92-3 Supplier Device Package. In addition, the Configuration is Single, the device is offered in N-Channel FET Type, the device has a 625mW of Power Max, and Voltage Breakdown V BRGSS is 40V, and the Current Drain Idss Vds Vgs=0 is 900μA @ 20V, and Voltage Cutoff VGS off Id is 800mV @ 10nA, and the Pd Power Dissipation is 360 mW, and Id Continuous Drain Current is 10 nA, and the Vds Drain Source Breakdown Voltage is 20 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 1000 uS, and Vgs Gate Source Breakdown Voltage is - 40 V, and the Gate Source Cutoff Voltage is - 4 V.

J202_D74Z with EDA / CAD Models, that includes TO-92-3 Supplier Device Package, they are designed to operate with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Package Case, Mounting Type is shown on datasheet note for use in a Through Hole, that offers Packaging features such as Tape & Reel (TR), FET Type is designed to work in N-Channel, as well as the 900μA @ 20V Current Drain Idss Vds Vgs=0, the device can also be used as 800mV @ 10nA Voltage Cutoff VGS off Id. In addition, the Power Max is 625mW, the device is offered in 40V Voltage Breakdown V BRGSS.

Features

Tape & Box (TB) Package
40 V Voltage - Breakdown (V(BR)GSS)
900 µA @ 20 V Current - Drain (Idss) @ Vds (Vgs=0)
800 mV @ 10 nA Voltage - Cutoff (VGS off) @ Id
625 mW Power - Max
Through Hole Mounting Type