ON H11G2SR2M

1有基极的达林顿晶体管-40°C ~ 100°C

Overview

The H11G1M and H11G2M are photodarlington-type optically coupled optocouplers.These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which hasan integral base-emitter resistor to optimize elevated temperature characteristics.

■High Sensitivity to Low Input Current (Minimum 500% CTR atl==1mA) ■Low Leakage Current at Elevated Temperature (Maximum 100 uA at 80℃) ■Safety and Regulatory Approvals: -UL1577,4,170VACRMS for 1 Minute -DIN-EN/IEC60747-5-5,850 V Peak Working Insulation Voltage Applications ■CMOS Logic Interface ■Telephone Ring Detector ■Low Input TTL Interface ■Power Supply Isolation ■Replace Pulse Transformer

Features

Tape & Reel (TR) Package
1 Number of Channels
4170Vrms Voltage - Isolation
1000% @ 10mA Current Transfer Ratio (Min)
5µs, 100µs Turn On / Turn Off Time (Typ)
DC Input Type
Darlington with Base Output Type
80V Voltage - Output (Max)
1.3V Voltage - Forward (Vf) (Typ)
60 mA Current - DC Forward (If) (Max)
1V Vce Saturation (Max)
Surface Mount Mounting Type