ON FW907-TL-E

MOSFET（金属氧化物）逻辑电平门N 和 P 沟道30V10A，8A17 毫欧 @ 10A，10V

Overview

The FW906-TL-E is MOSFET N/P-CH 30V 8A/6A 8SOP, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 8-SOIC (0.173", 4.40mm Width) Package Case, it has an Operating Temperature range of 150°C (TJ), that offers Mounting Type features such as Surface Mount, Supplier Device Package is designed to work in 8-SOP, as well as the N and P-Channel FET Type, the device can also be used as 2.5W Power Max. In addition, the Drain to Source Voltage Vdss is 30V, the device is offered in 690pF @ 10V Input Capacitance Ciss Vds, the device has a Logic Level Gate of FET Feature, and Current Continuous Drain Id 25°C is 8A, 6A, and the Rds On Max Id Vgs is 24 mOhm @ 8A, 10V, and Gate Charge Qg Vgs is 12nC @ 10V.

FW88386VXSG with circuit diagram manufactured by INTEL. The FW88386VXSG is available in BGA Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
10A, 8A Current - Continuous Drain (Id) @ 25°C
17mOhm @ 10A, 10V Rds On (Max) @ Id, Vgs
17nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1000pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
2.5W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type