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FW282-TL-E

ON FW282-TL-E

MOSFET(金属氧化物)逻辑电平门2 N-通道(双)35V6A37 毫欧 @ 6A,10V

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FW282-TL-E
MOSFET 2N-CH 35V 6A 8SOP
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产品详情

Overview

FW276-TL-2H with pin details, that includes Digi-ReelR Packaging, they are designed to operate with a 0.019048 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 8-SOIC (0.154", 3.90mm Width), Technology is designed to work in Si, it has an Operating Temperature range of 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 8-SOIC Supplier Device Package, the device has a Dual of Configuration, and FET Type is 2 N-Channel (Dual), and the Power Max is 1.6W, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 450V, and Input Capacitance Ciss Vds is 55pF @ 20V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 700mA, and the Rds On Max Id Vgs is 12.1 Ohm @ 350mA, 10V, and Vgs th Max Id is 4.5V @ 1mA, and the Gate Charge Qg Vgs is 3.7nC @ 10V, and Pd Power Dissipation is 1.6 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 46 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 700 mA, and the Vds Drain Source Breakdown Voltage is 450 V, and Vgs th Gate Source Threshold Voltage is 4.5 V, and the Rds On Drain Source Resistance is 12.1 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 15 ns, and Typical Turn On Delay Time is 7 ns, and the Qg Gate Charge is 3.7 nC.

FW261-TL-E with circuit diagram manufactured by SANYO. The FW261-TL-E is available in SOP8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
35V Drain to Source Voltage (Vdss)
6A Current - Continuous Drain (Id) @ 25°C
37mOhm @ 6A, 10V Rds On (Max) @ Id, Vgs
10nC @ 10V Gate Charge (Qg) (Max) @ Vgs
470pF @ 20V Input Capacitance (Ciss) (Max) @ Vds
2.2W Power - Max
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
技术: MOSFET(金属氧化物)
FET 功能: 逻辑电平门
配置: 2 N-通道(双)
漏源电压(Vdss): 35V
25°C 时电流 - 连续漏极 (Id): 6A
漏极电流和栅极至源极电压下的最大导通电阻: 37 毫欧 @ 6A,10V
最大栅极电荷 (Qg) @ Vgs: 10nC @ 10V
Vds 时的最大输入电容 (Ciss): 470pF @ 20V
最大功率: 2.2W
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.173",4.40mm 宽)
供应商器件封装: 8-SOP
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