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FJPF5200OTU

ON FJPF5200OTU

NPN17 A250 V

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onsemi
FJPF5200OTU
TRANS NPN 250V 17A TO220F-3
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产品详情

Overview

The FJPF5027RTU is TRANS NPN 800V 3A TO-220F, that includes Tube Packaging, they are designed to operate with a FJPF5027RTU_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.080072 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220F-3, as well as the Single Configuration, the device can also be used as 40 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a 800 V of Collector Emitter Voltage VCEO Max, and Transistor Polarity is NPN, and the Collector Emitter Saturation Voltage is 2 V, and Collector Base Voltage VCBO is 1.1 kV, and the Emitter Base Voltage VEBO is 7 V, and Maximum DC Collector Current is 3 A, and the Gain Bandwidth Product fT is 15 MHz, and Continuous Collector Current is 5 A, and the DC Collector Base Gain hfe Min is 15.

FJPF5027-R=J5027-R with circuit diagram manufactured by FSC. The FJPF5027-R=J5027-R is available in TO-220F Package, is part of the IC Chips.

Features

Tube Package
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
a transition frequency of 30MHz

Through Hole Mounting Type

Applications


There are a lot of ON Semiconductor
FJPF5200OTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting
产品属性
全选
包装: 管件
部件状态: 停产
晶体管类型: NPN
集电极电流 (Ic)(最大值): 17 A
最大集电极-发射极击穿电压: 250 V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 3V @ 800mA,8A
电流 - 集电极截止(最大值): 5µA(ICBO)
直流电流增益 (hFE) 最小值 @ Ic、Vce: 80 @ 1A,5V
最大功率: 50 W
频率 - 跃迁: 30MHz
工作温度: -50°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商器件封装: TO-220F-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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