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FGH75T65UPD

ON FGH75T65UPD

650 V150 A2.85mJ(开),1.2mJ(关)-55°C ~ 175°C(TJ)TO-247-3

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FGH75T65UPD
IGBT 650V 150A 375W TO-247AB
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¥4.28

价格更新:一个月前

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产品详情

Overview

FGH75T65SHDT_F155 with pin details, that includes Tube Packaging, they are designed to operate with a 1.340411 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Technology is designed to work in SiC, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 455W of Power Max, and Reverse Recovery Time trr is 76ns, and the Current Collector Ic Max is 150A, and Voltage Collector Emitter Breakdown Max is 650V, and the IGBT Type is Trench Field Stop, and Current Collector Pulsed Icm is 225A, and the Vce on Max Vge Ic is 2.1V @ 15V, 75A, and Switching Energy is 3mJ (on), 750μJ (off), and the Gate Charge is 123nC, and Td on off 25°C is 28ns/86ns, and the Test Condition is 400V, 75A, 3 Ohm, 15V, and Pd Power Dissipation is 455 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 650 V, and Collector Emitter Saturation Voltage is 1.6 V, and the Continuous Collector Current at 25 C is 150 A, and Gate Emitter Leakage Current is +/- 400 nA, and the Maximum Gate Emitter Voltage is +/- 20 V, and Continuous Collector Current Ic Max is 75 A.

FGH75T65SQD_F155 with circuit diagram, that includes 150A Current Collector Ic Max, they are designed to operate with a 300A Current Collector Pulsed Icm, Gate Charge is shown on datasheet note for use in a 128nC, that offers IGBT Type features such as Trench Field Stop, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as TO-247-3 Package Case. In addition, the Packaging is Tube, the device is offered in 375W Power Max, the device has a 43ns of Reverse Recovery Time trr, and Supplier Device Package is TO-247, and the Switching Energy is 760μJ (on), 180μJ (off), and Voltage Collector Emitter Breakdown Max is 650V.

Features

Tube Package


  • High current capability

  • High input impedance

  • Tightened parameter distribution

  • Available in the TO-247-3LD package

  • Innovative field stop trench IGBT technology



Through Hole Mounting Type

Applications


  • UPS

  • Solar inverter

  • Digital power generator

  • Uninterruptible power supplies

  • Energy generation and distribution


产品属性
全选
包装: 管件
部件状态: 不适用于新设计
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 650 V
集电极电流 (Ic)(最大值): 150 A
电流 - 集电极脉冲 (Icm): 225 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.3V @ 15V,75A
最大功率: 375 W
开关能量: 2.85mJ(开),1.2mJ(关)
输入类型: 标准
栅极电荷: 385 nC
25°C 时的开/关延迟时间: 32ns/166ns
测试条件: 400V,75A,3 欧姆,15V
反向恢复时间 (trr): 85 ns
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247-3
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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