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FGH50N6S2

ON FGH50N6S2

600 V75 A260µJ(开),250µJ(关)-55°C ~ 150°C(TJ)TO-247-3

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FGH50N6S2
IGBT 600V 75A 463W TO247
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产品详情

Overview

The FGH50N3 is IGBT 300V 75A 463W TO247, that includes Tube Packaging, they are designed to operate with a FGH50N3_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.225401 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-247-3, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is TO-247, the device is offered in Single Configuration, the device has a 463W of Power Max, and Current Collector Ic Max is 75A, and the Voltage Collector Emitter Breakdown Max is 300V, and IGBT Type is PT, and the Current Collector Pulsed Icm is 240A, and Vce on Max Vge Ic is 1.4V @ 15V, 30A, and the Switching Energy is 130μJ (on), 92μJ (off), and Gate Charge is 180nC, and the Td on off 25°C is 20ns/135ns, and Test Condition is 180V, 30A, 5 Ohm, 15V, and the Pd Power Dissipation is 463 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 300 V, and the Collector Emitter Saturation Voltage is 1.3 V, and Continuous Collector Current at 25 C is 75 A, and the Gate Emitter Leakage Current is +/- 250 nA, and Maximum Gate Emitter Voltage is +/- 20 V, and the Continuous Collector Current Ic Max is 75 A.

FGH40T70SHD_F155 with circuit diagram, that includes 2.37 V Collector Emitter Saturation Voltage, they are designed to operate with a 700 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Single, that offers Continuous Collector Current at 25 C features such as 80 A, Continuous Collector Current Ic Max is designed to work in 80 A, as well as the +/- 400 nA Gate Emitter Leakage Current, the device can also be used as +/- 20 V Maximum Gate Emitter Voltage, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, the device has a Through Hole of Mounting Style, and Package Case is TO-247-3, and the Packaging is Tube, and Pd Power Dissipation is 268 W.

Features

Tube Package
600 V Voltage - Collector Emitter Breakdown (Max)
75 A Current - Collector (Ic) (Max)
240 A Current - Collector Pulsed (Icm)
2.7V @ 15V, 30A Vce(on) (Max) @ Vge, Ic
463 W Power - Max
260µJ (on), 250µJ (off) Switching Energy
Standard Input Type
70 nC Gate Charge
13ns/55ns Td (on/off) @ 25°C
390V, 30A, 3Ohm, 15V Test Condition
Through Hole Mounting Type
产品属性
全选
包装: 管件
部件状态: 停产
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 75 A
电流 - 集电极脉冲 (Icm): 240 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.7V @ 15V,30A
最大功率: 463 W
开关能量: 260µJ(开),250µJ(关)
输入类型: 标准
栅极电荷: 70 nC
25°C 时的开/关延迟时间: 13ns/55ns
测试条件: 390V,30A,3 欧姆,15V
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247-3
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onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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