ON FGH40T65UQDF-F155

650 V80 A989µJ（开），310µJ（关）-55°C ~ 175°C（TJ）TO-247-3

Overview

ON Semiconductor Solutions for Energy Infrastructure addresses the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

Features

• Max Junction Temperature 175°C

• Positive Temperature Co?efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A

• 100% of the Parts Tested for ILM

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb?Free and is RoHS Compliant

Applications

• Induction Heating

• MWO